Fabrication of GaN(1−x) Asx , Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System-Reference-Cited by-同舟云学术

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Fabrication of GaN(1−x) Asx , Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Published:2018-07-10 Issue:8 Volume:53 Page:1800042
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Ramírez-González Francisco Sebastian¹^ORCID,García-Salgado Godofredo¹,Morales Crisóforo¹^ORCID,Díaz Tomás¹,Rosendo Enrique¹^ORCID,Nieto-Caballero Fabiola Gabriela²^ORCID,Luna José Alberto¹^ORCID,Coyopol Antonio¹,Romano Román¹^ORCID,Galeazzi Reina¹^ORCID

Affiliation:

1. Centro de Investigación en Dispositivos Semiconductores; Benemérita Universidad Autónoma de Puebla; 14 Sur y Av. San Claudio 72570 Puebla México

2. Facultad de Ciencias Químicas; Benemérita Universidad Autónoma de Puebla; 14 Sur y Av. San Claudio 72570 Puebla México

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201800042/fullpdf

Reference26 articles.

1. Substrates for gallium nitride epitaxy

2. GaN, AlN, and InN: A review

3. III-V nitrides for electronic and optoelectronic applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Gold Nanoparticles Enhanced ZnO/GaN UV Detector;IEEE Journal of the Electron Devices Society;2022

2. GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT;Journal of Alloys and Compounds;2021-12

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