An optimized Ni P seed layer coating method for through glass via (TGV)-Reference-Cited by-同舟云学术

An optimized Ni P seed layer coating method for through glass via (TGV)

Published:2022-03 Issue: Volume:257 Page:111735
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Chen Yuzhe,Zhang Jihua,Gao Libin,Zou Siyue,Liang Kexin,Liu Zhongzhe,Fang Zhen,Chen Hongwei,Ye Qinyan

Funder

National Natural Science Foundation of China

Sichuan Province Science and Technology Support Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

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3. Communication-defect-free filling of high aspect ratio through vias in ultrathin glass;Chang;J. Electrochem. Soc.,2018

4. Pd-free activation pretreatment for electroless Ni-P plating on NiFe2O4 particles;Ma;Materials (Basel),2018

5. Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology;Inoue;Electrochim. Acta,2011

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3. Through Glass Vias Fabrication using Ultrasonic Micromachining and Electroless Deposition;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

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