Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices-Reference-Cited by-同舟云学术

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

Published:2017-05 Issue: Volume:72 Page:80-84
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Yamaguchi Shimpei^ORCID,Bayindir Zeynel,He Xiaoli,Uppal Suresh,Srinivasan Purushothaman,Yong Chloe,Choi Dongil,Joshi Manoj,Yang Hyuck Soo,Hu Owen,Samavedam Srikanth,Sohn D.K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. VFB roll-off in HfO2 gate stack after high temperature annealing process - a crucial role of out-diffused oxygen from HfO2 to Si -;Akiyama,2007

4. Roles of oxygen vacancy in HfO2/ultra-thin SiO2 gate stacks - comprehensive understanding of VFB roll-off -;Akiyama,2008

5. Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gates;Cartier,2004

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1. Effect of Stacked Work Function Metals on Gate Stress Reliability of n- and p-FinFETs;IEEE Transactions on Electron Devices;2023-08

2. FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits;2022 International Electron Devices Meeting (IEDM);2022-12-03

3. Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11

4. Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks;IEEE Open Journal of Nanotechnology;2021

5. Fermi-level pinning in full metal/high-k/SiO2/Si stacks;Journal of Applied Physics;2017-11-21