Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices-Reference-Cited by-同舟云学术

Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Arimura H.¹,Ragnarsson L.-A.¹,Oniki Y.¹,Franco J.¹,Vandooren A.¹,Brus S.¹,Leonhardt A.²,Sippola P.²,Ivanova T.²,Verni G. Alessio³,Chang R.-J.³,Xie Q.³,Givens M.³,Mitard J.¹,Biesemans S.¹,Litta E. Dentoni¹,Horiguchi N.¹

Affiliation:

1. imec,Leuven,Belgium

2. ASM Microchemistry,Helsinki,Finland

3. ASM Belgium,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720527.pdf?arnumber=9720527

Reference10 articles.

1. Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling

2. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

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