Fermi-level pinning in full metal/high-k/SiO2/Si stacks
Author:
Affiliation:
1. School of Physics, Beihang University, Beijing 100191, China
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5005570
Reference31 articles.
1. Fermi-Level Pinning at Metal/High-$k$ Interface Influenced by Electron State Density of Metal Gate
2. Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
3. Analysis of flatband voltage shift of metal/high- k /SiO 2 /Si stack based on energy band alignment of entire gate stack
4. Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach
5. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
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1. A Simulation Study on Minimizing Threshold Voltage Variability by Optimizing Oxygen Vacancy Concentration Under Metal Gate Granularity;IEEE Electron Device Letters;2020-09
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3. Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors;Journal of Applied Physics;2019-07-28
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