FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits-Reference-Cited by-同舟云学术

FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Capogreco E.¹,Arimura H.¹,Ritzenthaler R.¹,Brus S.¹,Oniki Y.¹,Dupuy E.¹,Sebaai F.¹,Radisic D.¹,Chan B. T.¹,Zhou D.¹,Machkaoutsan V.²,Yoon S.³,Itokawa H.⁴,Yamaguchi M.⁴,Gao Z.⁵,Fazan P.²,Chen Y.⁵,Subramanian S.¹,Ragnarsson L.-A.¹,Spessot A.¹,Litta E. Dentoni¹,Horiguchi N.¹

Affiliation:

1. imec, Kapeldreef 75,Leuven,Belgium,B-3001

2. Micron

3. SK-Hynix

4. Kioxia

5. Western Digital

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019422.pdf?arnumber=10019422

Reference16 articles.

1. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

2. Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

3. Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks

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3. Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility;ACS Applied Materials & Interfaces;2023-07-25

4. Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique;Nanomaterials;2023-04-03