Process variation dependence of total ionizing dose effects in bulk nFinFETs-Reference-Cited by-同舟云学术

Process variation dependence of total ionizing dose effects in bulk nFinFETs

Published:2018-09 Issue: Volume:88-90 Page:946-951
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Li B.^ORCID,Huang Y.-B.,Yang L.,Zhang Q.-Z.,Zheng Z.-S.,Li B.-H.,Zhu H.-P.,Bu J.-H.,Yin H.-X.,Luo J.-J.,Han Z.-S.,Wang H.-B.

Funder

Beijing Municipal Education Commission

Youth Innovation Promotion Association CAS

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. More Moore section of white paper. International roadmap for devices and systems,2016

2. High tolerance to total ionizing dose of Ω -shaped gate field-effect transistors;Gaillardin;Appl. Phys. Lett.,2006

3. Soft error susceptibilities of 22 nm tri-gate devices;Seifert;IEEE Trans. Nucl. Sci.,2013

4. Intrinsic transistor reliability improvements from 22 nm tri-gate technology;Ramey,2013

5. An effective method to compensate total ionizing dose induced degradation on double-SOI structure;Huang;IEEE Trans. Nucl. Sci.,2018

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