Soft Error Susceptibilities of 22 nm Tri-Gate Devices-Reference-Cited by-同舟云学术

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Soft Error Susceptibilities of 22 nm Tri-Gate Devices

Published:2012-12 Issue:6 Volume:59 Page:2666-2673
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Seifert N.,Gill B.,Jahinuzzaman S.,Basile J.,Ambrose V.,Quan Shi ,Allmon R.,Bramnik A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/6365378/06338321.pdf?arnumber=6338321

Cited by 105 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Study of Multicell Upsets in SRAM at a 5-nm Bulk FinFET Node;IEEE Transactions on Nuclear Science;2023-04

3. Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMs;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET Technology;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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