Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors-Reference-Cited by-同舟云学术

Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors

Published:2023-01 Issue: Volume:105 Page:108554
ISSN:0045-7906
Container-title:Computers and Electrical Engineering
language:en
Short-container-title:Computers and Electrical Engineering

Author:

Butola Rajat^ORCID,Li Yiming^ORCID,Kola Sekhar Reddy,Akbar Chandni,Chuang Min-Hui

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Computer Science,Control and Systems Engineering

Reference30 articles.

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3. Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers;Kola,2020

4. DC Characteristics and Dynamic Properties of Multi-Channel Nanosheet MOSFETs with and without Tungsten Metal Sidewall for Sub-3-nm Technological Nodes;Chuang;ECS Journal of Solid State Science and Technology,2022

5. Characteristics of stacked gate-all-around Si nanosheet MOSFETs with metal sidewall source/drain and their impacts on CMOS circuit properties;Sung;IEEE Trans Electron Devices,2021

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