Numerical investigation and temperature-based analysis of the analog performance of fully gate-covered junctionless FinFET
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,General Computer Science,Control and Systems Engineering
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2. Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors;Computers and Electrical Engineering;2023-01
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