1. Sicard, E., Introducing 7-nm FinFET technology in microwind, https://hal.archives-ouvertes.fr/hal-01558775/ document.
2. Mohammed, M.U., Nizam, A., and Chowdhury, M.H., Performance stability analysis of SRAM cells based on different FinFET devices in 7nm technology, in Proceedings of the 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Burlingame: IEEE, 2018, pp. 1–3.
3. Sicard, E., Introducing 14-nm FinFET technology in microwind, 2017. https://hal.archives-ouvertes.fr/hal-01541171/document.
4. Petrosyants, K.O. et al., TCAD modeling of nanoscale bulk FinFET structures with account of radiation exposure, Izv. Vyssh. Uchebn. Zaved.,
Elektron., 2021, vol. 26, no. 5, pp. 374–386.
5. Gaynor, B.D. and Hassoun, S., Fin shape impact on FinFET leakage with application to multithreshold and ultralow-leakage FinFET design, IEEE Trans. Electron Dev., 2014, vol. 61, no. 8, pp. 2738–2744.