Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET-Reference-Cited by-同舟云学术

Physical mechanisms for gate damage induced by heavy ions in SiC power MOSFET

Published:2020-11 Issue: Volume:114 Page:113903
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Busatto G.,Di Pasquale A.,Marciano D.,Palazzo S.,Sanseverino A.,Velardi F.

Funder

MIUR

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes;Shoji;Jpn. J. Appl. Phys.,2014

5. Tolerance against terrestrial neutron-induced single-event burnout in SiC MOSFETs;Asai;IEEE Trans. Nucl. Sci.,2014

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1. Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs;IEEE Transactions on Electron Devices;2024-04

2. Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation;Electronics;2023-06-29

3. Short Circuits in GaN HEMTs: Test Bench Setup and Characterization;IEEE Transactions on Power Electronics;2023-03

4. Effect of Heavy Ion Irradiation on SiC MOSFET Dynamic Parameter;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

5. A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs;Silicon;2022-08-03