Short Circuits in GaN HEMTs: Test Bench Setup and Characterization
Author:
Affiliation:
1. Centro de Electrnónica Industrial, Universidad Politécnica de Madrid, Madrid, Spain
2. ON Semiconductor, Oudenaarde, Belgium
Funder
Spanish Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9998562/09944893.pdf?arnumber=9944893
Reference41 articles.
1. Short-Circuit Degradation of 10-kV 10-A SiC MOSFET
2. Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
3. Analysis of short circuit type II and III of high voltage SiC MOSFETs with fast current source gate drive principle
4. Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs
5. Degradation Assessment in IGBT Modules Using Four-Point Probing Approach
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