Short-Circuit Degradation of 10-kV 10-A SiC MOSFET-Reference-Cited by-同舟云学术

Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

Published:2017-12 Issue:12 Volume:32 Page:9342-9354
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Eni Emanuel-Petre,Beczkowski Szymon,Munk-Nielsen Stig,Kerekes Tamas,Teodorescu Remus,Juluri Raghavendra Rao,Julsgaard Brian,VanBrunt Edward,Hull Brett,Sabri Shadi,Grider David,Uhrenfeldt Christian

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/8000711/07833196.pdf?arnumber=7833196

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5. Electro-thermo-mechanical modelling of a SiC MOSFET transistor under non-destructive short-circuit;Microelectronics Reliability;2023-11