A Gate Voltage Clamping Method to Improve the Short-Circuit Characteristic of SiC MOSFET-Reference-Cited by-同舟云学术

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A Gate Voltage Clamping Method to Improve the Short-Circuit Characteristic of SiC MOSFET

Published:2023-11-10 Issue: Volume: Page:287-292
ISSN:
Container-title:2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
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Author:

Ouyang Wenyuan¹,Sun Pengju¹,Xie Minghang¹,Hu Yingpeng²,Ma Xing³

Affiliation:

1. Chongqing University,State Key Laboratory of Power Transmission Equipment and System Security and New Technology,Chongqing,China

2. Super High Voltage Branch of Chongqing Electric Power Company STATE GRID,Chongqing,China

3. State Grid Chongqing Electric Power Research Institute STATE GRID,Chongqing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10394673/10394683/10395286.pdf?arnumber=10395286

Reference20 articles.

1. Characterization and Evaluation of the State-of-the-Art 3.3-kV 400-A SiC MOSFETs

2. A Survey of Wide Bandgap Power Semiconductor Devices

3. Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

4. Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

5. Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

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