Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs-Reference-Cited by-同舟云学术

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Tolerance Against Terrestrial Neutron-Induced Single-Event Burnout in SiC MOSFETs

Published:2014-12 Issue:6 Volume:61 Page:3109-3114
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Asai Hiroaki,Nashiyama Isamu,Sugimoto Kenji,Shiba Kensuke,Sakaide Yasuo,Ishimaru Yasuo,Okazaki Yuji,Noguchi Kenta,Morimura Tadaaki

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6976033/06969834.pdf?arnumber=6969834

Cited by 63 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.5-kV AlGaN/GaN MIS-HEMT With 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons;IEEE Electron Device Letters;2024-07

2. Single-Event Effects in SiC Power MOSFET Induced by Pulsed-Laser Two Photon Absorption;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices;Science and Technology of Nuclear Installations;2024-03-30

4. Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer;Microelectronics Reliability;2024-03

5. Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions;IEEE Transactions on Electron Devices;2024-03

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