Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs-Reference-Cited by-同舟云学术

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Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Published:2024-04 Issue:4 Volume:71 Page:2524-2529
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Qiu Leshan¹,Bai Yun²^ORCID,Ding Jieqin³,Hao Jilong²^ORCID,Tang Yidan²^ORCID,Yang Chengyue²,Tian Xiaoli²^ORCID,Li Chengzhan³,Liu Xinyu²^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

2. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China

3. State Key Laboratory of Advance Power Semiconductor Device, Zhuzhou CRRC Times Semiconductor Company Ltd., Zhuzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10443426.pdf?arnumber=10443426

Reference26 articles.

1. Cooperative Caching in Vehicular Content Centric Network Based on Social Attributes and Mobility

2. Single event burnout sensitivity of SiC and Si

3. Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs

4. Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

5. Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

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