Mobility enhancement of indium-gallium oxide via oxygen diffusion induced by a metal catalytic layer-Reference-Cited by-同舟云学术

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Mobility enhancement of indium-gallium oxide via oxygen diffusion induced by a metal catalytic layer

Published:2021-05 Issue: Volume:862 Page:158009
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Lee Si Hyung,Lee Sueon,Jang Seong Cheol,On Nuri,Kim Hyun-Suk,Jeong Jae Kyeong

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference36 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Oxide semiconductor thin‐film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

3. The effect of sputter growth conditions on the charge transport and stability of In-Ga-Zn-O semiconductors;Yang;Thin Solid Films,2017

4. High-performance solution-processed amorphous-oxide-semiconductor TFTs with organic polymeric gate dielectrics;Pecunia;Adv. Electron. Mater.,2015

5. Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition;Cho;J. Inf. Disp.,2019

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1. Growth of high quality polycrystalline InGaO thin films by spray pyrolysis for coplanar thin-film transistors on polyimide substrate;Journal of Alloys and Compounds;2024-10

2. Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices;Advanced Electronic Materials;2024-07-25

3. Mobility and current boosting of In-Ga-Zn-O thin-film transistors with metal capping layer oxidation;Nanotechnology;2024-06-14

4. Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer;Materials Science in Semiconductor Processing;2024-04

5. Ultrasensitive and High-Speed Ga₂O₃ Solar-Blind Photodetection Based on Defect Engineering;IEEE Transactions on Electron Devices;2023-08

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