Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition-Reference-Cited by-同舟云学术

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Published:2018-11-04 Issue:2 Volume:20 Page:73-80
ISSN:1598-0316
Container-title:Journal of Information Display
language:en
Short-container-title:Journal of Information Display

Author:

Cho Min Hoe¹,Kim Min Jae¹,Seul Hyunjoo¹,Yun Pil Sang²,Bae Jong Uk²,Park Kwon-Shik²,Jeong Jae Kyeong¹

Affiliation:

1. Department of Electronics and Computer Engineering, Hanyang University, Seoul, Republic of Korea

2. R&D Center, LG Display Company, Paju-Si, Kyonggi-Do, Republic of Korea

Funder

LG Display

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/15980316.2018.1540365

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Material characteristics and applications of transparent amorphous oxide semiconductors

3. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

5. Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

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