Ultrasensitive and High-Speed Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetection Based on Defect Engineering-Reference-Cited by-同舟云学术

Ultrasensitive and High-Speed Ga₂O₃ Solar-Blind Photodetection Based on Defect Engineering

Published:2023-08 Issue:8 Volume:70 Page:4236-4242
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ji Xue-Qiang¹^ORCID,Liu Ming-Yu²,Yan Zu-Yong³^ORCID,Li Shan⁴^ORCID,Liu Zeng⁴^ORCID,Qi Xiao-Hui¹,Yuan Jian-Ying¹,Wang Jin-Jin¹,Zhao Yuan-Chun²^ORCID,Tang Wei-Hua⁴^ORCID,Li Pei-Gang¹

Affiliation:

1. School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

2. State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, China

3. School of Science, Lanzhou University of Technology, Lanzhou, China

4. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10154142.pdf?arnumber=10154142

Reference56 articles.

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3. High-performance β-Ga2O3-based solar-blind photodetector with ultralow dark current and fast photoresponse for deep-ultraviolet communication

4. SS -Ga2O3/p-type 4H-SiC heterojunction diodes and applications to deep-UV photodiodes;nakagomi;Phys Status Solidi Appl Mater Sci,2019

5. Influence of oxygen vacancies on the photoresponse ofβ-Ga2O3/SiCn–ntype heterojunctions

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