The effect of sputter growth conditions on the charge transport and stability of In-Ga-Zn-O semiconductors-Reference-Cited by-同舟云学术

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The effect of sputter growth conditions on the charge transport and stability of In-Ga-Zn-O semiconductors

Published:2017-09 Issue: Volume:638 Page:361-366
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yang Dae Gyu,Do Kim Hyoung,Kim Jong Heon,Lee Sung Woo,Park Jozeph,Kim Yong Joo,Kim Hyun-Suk

Funder

Ministry of Education

MOTIE

Ministry of Science, ICT and Future Planning

Korean government

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Ionic amorphous oxide semiconductors: material design, carrier transport, and device application;Hosono;J. Non-Cryst. Solids,2006

3. Electrical properties and stability of dual-gate coplanar homojunction DC sputtered amorphous Indium–Gallium–Zinc–Oxide thin-film transistors andiIts application to AM-OLEDs;Baek;IEEE. T. Electron. Dev.,2011

4. High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering;Lim;J. Electrochem. Soc.,2008

5. A-InGaZnO thin-film transistors for AMOLEDs: electrical stability and pixel-circuit;Chen;J. Soc. Inf. Disp.,2009

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4. The influence of annealing atmosphere on sputtered indium oxide thin-film transistors;Journal of Physics D: Applied Physics;2023-07-24

5. Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects;ACS Applied Electronic Materials;2023-04-07

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