Codoping of Al and In atoms in β-Ga2O3 semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
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1. First-principles study on the magnetism, carrier activity, and carrier lifetime of Ga2O3: Li or Na or K with different valence Ga vacancies and H interstitial;Vacuum;2024-01
2. Photoanodic properties of In/β-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method;Optical Materials;2023-11
3. Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD;Crystal Growth & Design;2023-07-05
4. The Spatial Correlation and Anisotropy of β-(AlxGa1−x)2O3 Single Crystal;Materials;2023-06-08
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