An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation-Reference-Cited by-同舟云学术

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An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation

Published:2021-09-20 Issue:12 Volume:119 Page:122103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yoon Youngbin¹²^ORCID,Kim Min Ju³^ORCID,Cho Byung Jin³^ORCID,Shin Myunghun¹^ORCID,Hwang Wan Sik²⁴^ORCID

Affiliation:

1. School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, South Korea

2. Smart Drone Convergence, Korea Aerospace University, Goyang 10540, South Korea

3. School of Electrical Engineering, KAIST, Daejeon 34141, South Korea

4. Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, South Korea

Funder

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0065244

Reference34 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Power semiconductor device figure of merit for high-frequency applications

5. New Unipolar Switching Power Device Figures of Merit

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4. 4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition;physica status solidi (RRL) – Rapid Research Letters;2024-05-10

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