Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD-Reference-Cited by-同舟云学术

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Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD

Published:2024-04 Issue: Volume:173 Page:108130
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Vo Thanh Huong,Kim Sunjae,Kim Hyeong-Yun,Park Ji-Hyeon,Jeon Dae-Woo,Hwang Wan Sik^ORCID

Funder

Korea Ministry of Trade Industry and Energy

National Research Foundation of Korea

Publisher

Elsevier BV

Reference37 articles.

1. Perspective—opportunities and future directions for Ga2O3;Mastro;ECS J. Solid State Sci. Technol.,2017

2. β-Gallium oxide power electronics;Green;Apl. Mater.,2022

3. An 8-nm-thick Sn-doped polycrystalline β-Ga2O3 MOSFET with a “normally off” operation;Yoon;Appl. Phys. Lett.,2021

4. Electrical and photocurrent properties of a polycrystalline Sn-doped β-Ga2O3 thin film;Yoon;Mater. Sci. Semicond. Process.,2021

5. Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD;Gucmann;Mater. Sci. Semicond. Process.,2023

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance normally-off Si-doped β-Ga2O3 deep ultraviolet phototransistor grown on N-doped β-Ga2O3;Applied Surface Science;2025-01

2. Ohmic Contact Formation to β-Ga2O3 Nanosheet Transistors with Ar-Containing Plasma Treatment;Electronics;2024-08-12

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