Single β-Ga2O3 nanowire based lateral FinFET on Si-Reference-Cited by-同舟云学术

Single β-Ga₂O₃ nanowire based lateral FinFET on Si

Published:2022-04-11 Issue:15 Volume:120 Page:153501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Siyuan¹²,Liu Lining³^ORCID,Qu Guangming¹⁴,Zhang Xingfei¹²,Jia Chunyang¹²,Wu Songhao³,Ma Yuanxiao³,Lee Young Jin⁵,Wang Guodong⁴,Park Ji-Hyeon⁵,Zhang Yiyun¹²^ORCID,Yi Xiaoyan¹²,Wang Yeliang³,Li Jinmin¹²

Affiliation:

1. R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China

4. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, Henan Province, China

5. Korea Institute of Ceramic Engineering and Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsongnam-do 52851, South Korea

Abstract

A fin field-effect transistor (FinFET) based on single β-Ga2O3 nanowire with a diameter of ∼60 nm transferred to Si substrate is demonstrated. The FinFET device shows good saturation performance within a drain-to-source voltage up to 5 V and exhibits a high on/off ratio of ∼4 × 108, a system-limit low leakage current (∼4 fA), and a relatively low subthreshold swing (∼110 mV). Simulation shows that the channel of the FinFET depletes much faster than that of the back-gate FET with negative gate bias, which is consistent with the measurement results. Moreover, trap-related 1/ f noise and 1/ f2 noise have been identified according to low frequency noise analysis, and a carrier number fluctuation is expected to be the dominant 1/ f noise mechanism in the β-Ga2O3 FinFET in this work.

Funder

Chinese Academy of Sciences

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0086909

Reference50 articles.

1. Analysis of the reverse I-V characteristics of diamond-based PIN diodes

2. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor

3. Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

4. M. Saremi , “ Modeling and simulation of the programmable metallization cells (PMCS) and diamond-based power devices,” Ph.D. dissertation ( Arizona State University, 2017).

5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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