Photoanodic properties of In/β-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method-Reference-Cited by-同舟云学术

Photoanodic properties of In/β-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method

Published:2023-11 Issue: Volume:145 Page:114424
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Jubu Peverga R.^ORCID,Danladi E.,Chahul H.F.^ORCID,Aldayyat A.,Yusof Y.^ORCID,Chahrour Khaled M.^ORCID,Kyesmen P.I.^ORCID,Tyona M.D.^ORCID,Abiem L.T.^ORCID,Yam F.K.

Funder

Universiti Sains Malaysia

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference70 articles.

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3. The growth and expansive applications of amorphous Ga2O3: a review;Xi;Chin. Phys. B,2023

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5. β-Ga2O3 material properties, growth technologies, and devices: a review;Higashiwaki;AAPPS Bull.,2022

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