High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3
Author:
Affiliation:
1. Department of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
2. Korea Institute of Ceramic Engineering and Technology, Jinju-si, Gyeongsang-nam-do 52851, South Korea
Funder
National Research Foundation of Korea
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0000940
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Charge-carrier engineering of staggered-gap p-CuAlO2/β-Ga2O3 bipolar heterojunction for self-powered photodetector with exceptional linear dynamic range and stability;Materials Today Physics;2024-01
2. Heteroepitaxial Growth of Thick α-Ga2O3 Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy;Crystal Growth & Design;2023-12-04
3. Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity;IEEE Sensors Journal;2023-09-01
4. Alpha-phase gallium oxide-based UVC photodetector with high sensitivity and visible blindness;APL Materials;2023-06-01
5. High mobility of intrinsic defects in α-Ga2O3;Applied Physics Letters;2023-05-01
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