Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide-Reference-Cited by-同舟云学术

Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide

Published:2006-01 Issue:8 Volume:26 Page:1325-1335
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Zhou Yanping,Probst Daniel,Thissen Andreas,Kroke Edwin,Riedel Ralf,Hauser Ralf,Hoche Holger,Broszeit Erhard,Kroll Peter,Stafast Herbert

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference59 articles.

1. A covalent micro/nano-composite resistant to high-temperature oxidation

2. Silicon carbonitride: a rival to cubic boron nitride

3. Influence of temperature on the properties of films prepared by plasma-enhanced chemical vapour deposition

4. Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar

5. Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target

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