Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature-Reference-Cited by-同舟云学术

Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature

Published:2022-12-27 Issue:4 Volume:20 Page:
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Processes & Polymers

Author:

Wrobel Aleksander M.¹^ORCID,Uznanski Pawel¹^ORCID

Affiliation:

1. Centre of Molecular and Macromolecular Studies Polish Academy of Sciences Lodz Poland

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.202200190

Reference71 articles.

1. B. N.Varadarajan (Novellus Systems Inc.) US Patent 9234276B2 2014.

2. B. N.Varadarajan B.Gong Z.Gui (Novellus Systems Inc.) US Patent 10325773B2 2015.

3. Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si–C–N

4. Synthesis and characterization of hexamethyldisilane films deposited on stainless steel by plasma-enhanced chemical vapour deposition

5. Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

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