Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature
Author:
Affiliation:
1. Centre of Molecular and Macromolecular Studies Polish Academy of Sciences Lodz Poland
Publisher
Wiley
Subject
Polymers and Plastics,Condensed Matter Physics
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.202200190
Reference71 articles.
1. B. N.Varadarajan (Novellus Systems Inc.) US Patent 9234276B2 2014.
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3. Maximum Achievable N Content in Atom-by-Atom Growth of Amorphous Si–C–N
4. Synthesis and characterization of hexamethyldisilane films deposited on stainless steel by plasma-enhanced chemical vapour deposition
5. Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane
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1. Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature;Plasma Processes and Polymers;2022-12-27
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