Effect of plasma power on growth process, chemical structure, and properties of PECVD films produced from hexamethyldisilane and ammonia-Reference-Cited by-同舟云学术

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Effect of plasma power on growth process, chemical structure, and properties of PECVD films produced from hexamethyldisilane and ammonia

Published:2024-08 Issue: Volume:490 Page:131131
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Ermakova Evgeniya,Shayapov Vladimir,Saraev Andrey,Maximovsky Eugene,Kirienko Viktor,Khomyakov Maksim,Sulyaeva Veronica,Kolodin Aleksey,Gerasimov Evgeny,Kosinova Marina

Funder

Ministry of Education and Science of the Russian Federation

Russian Science Foundation

Publisher

Elsevier BV

Reference87 articles.

1. Dual low pressure plasma process for SiCN:H thin films deposition: a comparative study;Hugon;Vacuum,2024

2. Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects;King;ECS J. Solid State Sci. Technol.,2015

3. Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film;Cheng;Thin Solid Films,2020

4. Electrical characteristics and reliability of SiCN/porous SiOCH stacked dielectric: effects of deposition temperature of SiCN film;Cheng;ECS J. Solid State Sci. Technol.,2021

5. Studies on oxygen permeation resistance of SiCN thin film and RRAM applications;Song;Nanomaterials,2022

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