DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN

Published:2012-12 Issue: Volume:78 Page:121-126
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Shah P.B.,Dedhia R.H.,Tompkins R.P.,Viveiros E.A.,Jones K.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Resistivity control in unintentionally doped GaN films grown by MOCVD

2. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

3. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

4. Trapping effects in GaN and SiC microwave FETs

5. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-bandgap excited photoluminescence probing of deep defect complexes in GaN doped by Si, Ge and C impurities;Semiconductor Science and Technology;2024-09-12

2. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy;Journal of Semiconductors;2024-03-01

3. Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs;IEEE Transactions on Electron Devices;2024-02

4. Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach;Applied Physics Letters;2020-12-28

5. Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy;Physical Review B;2020-06-24

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3