Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach-Reference-Cited by-同舟云学术

Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Published:2020-12-28 Issue:26 Volume:117 Page:263501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xin¹²³^ORCID,Zhong Yaozong³⁴^ORCID,Zhou Yu³⁴⁵^ORCID,Gao Hongwei³,Zhan Xiaoning³,Su Shuai³⁴,Guo Xiaolu³⁴,Sun Qian³⁴⁵^ORCID,Zhang Zihui¹²,Bi Wengang¹²^ORCID,Yang Hui³⁴

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, People's Republic of China

2. Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, 5340 Xiping Road, Tianjin 300401, People's Republic of China

3. Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China

4. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, People's Republic of China

5. Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Foshan 528000, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0031029

Reference45 articles.

1. Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

2. Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

3. First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

4. GaN Power Transistors on Si Substrates for Switching Applications

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices;Micromachines;2024-07-31

2. Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs;Electronic Materials;2024-07-23

3. The effect of iron and carbon-related bulk traps on static I-V characteristics of p-GaN HEMTS;AIP Conference Proceedings;2024

4. The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices;Applied Physics Letters;2023-09-11

5. Enhanced breakdown voltage and dynamic performance of GaN HEMTs with AlN/GaN superlattice buffer;Journal of Physics D: Applied Physics;2023-05-25