Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3488610
Reference16 articles.
1. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
2. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
3. Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy
4. Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy
5. Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces
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