Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy-Reference-Cited by-同舟云学术

Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy

Published:2006-12-25 Issue:26 Volume:89 Page:262116
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Armstrong A.,Chakraborty A.,Speck J. S.,DenBaars S. P.,Mishra U. K.,Ringel S. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2424670

Reference13 articles.

1. Current instabilities in GaN-based devices

3. Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

4. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

5. Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

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