Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference45 articles.
1. Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Kuzuhara, 12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET, presented at IEDM, Washington, DC, 7–10 December, 2003
2. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias;Khan;Electron. Lett.,1994
3. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors;Klein;Appl. Phys. Lett.,1999
4. Low-frequency dispersion characteristics of GaN HFETs;Kruppa;Electron. Lett.,1995
5. Large signal frequency dispersion of AlGaN/GaN HEMTs;Kohn;Electron. Lett.,1999
Cited by 110 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08
2. A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability;IEEE Transactions on Power Electronics;2024-06
3. GaN trapping;GaN Transistor Modeling for RF and Power Electronics;2024
4. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01
5. Study of the Abnormally High Photocurrent Relaxation Time in α-Ga2O3-Based Schottky Diodes;Russian Microelectronics;2023-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3