On the analogy of the potential barrier of trenched JFET and JBS devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier;Mathematics and Computers in Simulation;2021-05
2. A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier;IEEE Transactions on Electron Devices;2020-01
3. Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors;Lecture Notes in Electrical Engineering;2020
4. Mechanisms and Characteristics of Large-Area High-Current-Density 4H-SiC Trench Junction Barrier Schottky Diodes;Materials Science Forum;2019-07
5. Optimized Design for 4H-SiC Power DMOSFET;IEEE Electron Device Letters;2016-11
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