Analysis of the Potential Barrier on the Behaviour of 4H-SiC JBS Temperature Sensors
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Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-030-37558-4_28
Reference22 articles.
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4. Bellone S et al (2014) Design and performances of 4H-SiC bipolar mode field effect transistor (BMFETs). IEEE Trans Power Electron 29:2174–2179
5. Ryu SH et al (2012) Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs. In: Proceedings of the 24th ISPSD, pp 257–260
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1. On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier;Mathematics and Computers in Simulation;2021-05
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