Demonstration of first 10 kV, 130 m cm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031214?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Status and prospects for SiC power MOSFETs
2. Zhao, J.H.: US, (6,107,649)
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