High temperature characterization of normally-on 4H-SiC junction field-effect transistor-Reference-Cited by-同舟云学术

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High temperature characterization of normally-on 4H-SiC junction field-effect transistor

Published:2016-11 Issue: Volume:99 Page:113-117
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Yimeng,Tang Meiyan,Song Qingwen,Tang Xiaoyan,Lv Hongliang,Liu Sicheng

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Modeling and high temperature characterization of SiC-JFET;Mousa,2008

2. A physics-based model for a SiC JFET accounting for electric-field-dependent mobility;Platania;IEEE Trans. Ind. Appl.,2011

3. Demonstration of first 10 kV, 130 mΩ cm2 normally-off 4H-SiC trenched-and-implanted vertical junction field-effect transistor;Alexandrov;Electron. Lett.,2003

4. Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET;Zhao;IEEE Electron Device Lett.,2004

5. Maximum junction temperatures of SiC power devices;Sheng;IEEE Trans. Electron Devices,2009

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1. Electro-thermal Design of MV SiC JFET Based Solid State Circuit Breakers;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

2. Investigation of Transient Liquid Phase Bonding to Low Temperature Co-fired Ceramic Substrates;2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm);2022-05-31

3. Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel;Electronics;2021-06-21

4. Effect of temperature on the structure and magnetic properties of Co doped SiC films;Superlattices and Microstructures;2017-07

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