4H-SiC normally-off vertical junction field-effect transistor with high current density-Reference-Cited by-同舟云学术

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4H-SiC normally-off vertical junction field-effect transistor with high current density

Published:2003-07 Issue:7 Volume:24 Page:463-465
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tone K.,Zhao J.H.,Fursin L.,Alexandrov P.,Weiner M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27369/01217298.pdf?arnumber=1217298

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