(Ultra)Wide-Bandgap Vertical Power FinFETs

Author:

Zhang YuhaoORCID,Palacios TomasORCID

Funder

Faculty Start-Up Fund at the Virginia Polytechnic Institute and State University

ARPA-E SWITCHES Program monitored by Dr. Isik Kizilyalli

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 73 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Efficient thermal management of high-power electronics via jet-enhanced HU-type manifold microchannel;International Journal of Heat and Mass Transfer;2024-04

2. Dynamic R ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

3. Planar Implantation Edge Termination for Vertical GaN Power Devices;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

4. P-Type Doping Control of Magnetron Sputtered NiO for High Voltage UWBG Device Structures;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

5. A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance;IEEE Transactions on Electron Devices;2023-12

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