On the design of the channel region in 4H-SiC JBS diode through an analytical model of the potential barrier
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics,Modelling and Simulation,Numerical Analysis,General Computer Science,Theoretical Computer Science
Reference27 articles.
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4. Design and performances of 4HSiC bipolar mode field effect transistor (BMFETs);Bellone;IEEE Trans. Power Electron.,2014
5. A model of the ID-VGS characteristics of normally off 4HSiC bipolar JFETs;Bellone;IEEE Trans. Power Electron.,2014
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1. Special Issue ELECTRIMACS 2019 ENERGY Modelling and computational simulation for control and diagnosis in renewable energy systems, energy storage, innovative devices and materials;Mathematics and Computers in Simulation;2021-05
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