A 4H-SiC UV Phototransistor With Excellent Optical Gain Based on Controlled Potential Barrier
Author:
Affiliation:
1. Department of Industrial Engineering, University of Salerno, Fisciano, Italy
2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8945448/08913626.pdf?arnumber=8913626
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Three-Dimensional Design of a 4H-SiC NPN Lateral Phototransistor for Micro-Pixel in Ultraviolet Optoelectronic Integration;IEEE Transactions on Electron Devices;2023-12
2. Design and Analysis of a Voltage Schmitt Trigger in 4H-SiC CMOS Technology;Lecture Notes in Electrical Engineering;2023-11-29
3. A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A;Electronics Letters;2023-09
4. Study on SiC UV/EUV Coaxial Photodetector;Journal of Physics: Conference Series;2023-07-01
5. A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18
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