Author:
Zhang E.X.,Fleetwood D.M.,Alles M.L.,Schrimpf R.D.,Mamouni F.E.,Xiong W.,Cristoloveanu S.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Okhonin S, Nagoga M, Lee C-W, Colinge J-P, Afzalian A, Yan R, et al. Ultra-scaled Z-RAM cell. In: IEEE international SOI conference proceedings, October 2008, p. 157–8.
2. A new memory effect (MSD) in fully depleted SOI MOSFETs;Bawedin;Solid-State Electron,2005
3. Floating-body SOI memory: concepts, physics and challenges;Bawedin;ECS Trans,2009
4. Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs;Na;Solid-State Electron,2009
5. Lederer D, Parvais B, Mercha A, Collaert N, Jurczak M, Raskin JP, Decoutere S. Dependence of FinFET RF performance on fin width.In: IEEE sixth topical meeting on silicon monolithic integrated circuits in RF systems (SiRF06); 2006, p. 8–11.
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