A new memory effect (MSD) in fully depleted SOI MOSFETs-Reference-Cited by-同舟云学术

A new memory effect (MSD) in fully depleted SOI MOSFETs

Published:2005-09 Issue:9 Volume:49 Page:1547-1555
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Bawedin M.,Cristoloveanu S.,Yun J.G.,Flandre D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Electrical characterization of silicon on insulator materials and devices;Cristoloveanu,1995

2. Influence of series resistances and interface coupling on the transconductance of fully-depleted silicon-on-insulator MOSFETs;Ouisse;Solid-State Electron,1992

3. Subthreshold kinks in fully depleted SOI MOSFETs;Fossum;IEEE Electron Dev Lett,1995

4. Pretet J et al. Scaling issues for advanced SOI devices: gate oxide tunneling, thin buried oxides, and ultra-thin films. Electrochem Soc Proc 2003-02, Pennington, USA, 2003;476–87.

5. LDMOS in SOI technology with very-thin silicon film;Bawedin;Solid-Sate Electron,2004

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