Author:
Bawedin Maryline,Cristoloveanu S.,Flandre Denis,Udrea Florin
Abstract
We present an overview of the single-transistor memory cells (1T-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling.
Publisher
The Electrochemical Society
Cited by
6 articles.
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