A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology-Reference-Cited by-同舟云学术

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

Author:

Xie H.¹^ORCID,Zhang W.¹^ORCID,Zhou P.²^ORCID,Cristoloveanu S.³^ORCID,Xu Y.⁴,Liu F. Y.⁵^ORCID,Wan J.¹^ORCID

Affiliation:

1. School of Information Science and Technology, Fudan University, Shanghai, China

2. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China

3. IMEP-LAHC, Centre National de la Recherche Scientifique (CNRS), Grenoble Institute of Technology, Université Grenoble Alpes, Grenoble, France

4. Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, China

5. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program of China

Shanghai Science and Technology Commission “Explorer Project”

Natural Science Foundation of Shanghai

Guangdong Province Research and Development in Key Fields from Guangdong Greater Bay Area Institute of Integrated Circuit and System

Guangzhou City Research and Development Program in Key Field

Opening Fund of Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

Reference32 articles.

3. A 31ns random cycle VCAT-based 4F2 DRAM with enhanced cell efficiency;Song