Author:
Na K.-I.,Cristoloveanu S.,Bae Y.-H.,Patruno P.,Xiong W.,Lee J.-H.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Advanced CMOS device technologies for 45nm node and below;Veloso;Sci Technol Adv Mater,2007
2. Innovative materials, devices, and CMOS technologies for low-power mobile multimedia;Skotnicki;IEEE Trans Electron Dev,2008
3. FinFETs and other multi-gate transistors;Colinge,2007
4. Hisamoto D, Lee W-C, Kedzierski J, Anderson E, Takeuchi H, Asano K, et al. Folded-channel MOSFET for deep-sub-tenth micron era. In: Technical digest – international electron devices meeting; 1998. p. 1032–4.
5. Liu Y, Matsukawa T, Endo K, Masahara M, Ishii K, O’Uchi S-I, et al. Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs. In: Technical digest – international electron devices meeting. IEDM; 2006.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献