Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

Author:

Na K.-I.,Cristoloveanu S.,Bae Y.-H.,Patruno P.,Xiong W.,Lee J.-H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Advanced CMOS device technologies for 45nm node and below;Veloso;Sci Technol Adv Mater,2007

2. Innovative materials, devices, and CMOS technologies for low-power mobile multimedia;Skotnicki;IEEE Trans Electron Dev,2008

3. FinFETs and other multi-gate transistors;Colinge,2007

4. Hisamoto D, Lee W-C, Kedzierski J, Anderson E, Takeuchi H, Asano K, et al. Folded-channel MOSFET for deep-sub-tenth micron era. In: Technical digest – international electron devices meeting; 1998. p. 1032–4.

5. Liu Y, Matsukawa T, Endo K, Masahara M, Ishii K, O’Uchi S-I, et al. Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs. In: Technical digest – international electron devices meeting. IEDM; 2006.

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2. Vertical Transistor With n-Bridge and Body on Gate for Low-Power 1T-DRAM Application;IEEE Transactions on Electron Devices;2017-12

3. Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs;IEEE Transactions on Nuclear Science;2010-12

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