Wideband characterization of SOI materials and devices

Author:

Raskin Jean-Pierre

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Analog/RF performance of multiple-gate SOI devices: wideband simulations and characterization;Raskin;IEEE Trans Electron Dev,2006

2. A desktop-computer-based calculation of high-frequency MOS C–V curves;Forbes;IEEE Trans Electron Dev,1987

3. Efficient numerical simulation of the high-frequency MOS capacitance;Watt;IEEE Trans Electron Dev,1987

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5. Properties of microstrip line on Si–SiO2 system;Hasegawa;IEEE Trans Microwave Theory Technol,1971

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1. Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements;Microwave and Optical Technology Letters;2018-08-11

2. FinFET and UTBB for RF SOI communication systems;Solid-State Electronics;2016-11

3. SOI Technologies from Microelectronics to Microsystems — Meeting the More than Moore Roadmap Requirements;International Journal of High Speed Electronics and Systems;2016-03

4. Output-Conductance Transition-Free Method for Improving the Radio-Frequency Linearity of Silicon-on-Insulator MOSFET Circuits;IEEE Transactions on Electron Devices;2014-07

5. Silicon‐on‐insulator MOSFETs models in analog/RF domain;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2013-11-28

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