Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements-Reference-Cited by-同舟云学术

Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements

Author:

Maafri Djabar¹^ORCID,Kazemi Esfeh Babak²,Saadi Abdelhalim¹,Yagoub Mustapha C. E.³,Raskin Jean-Pierre²

Affiliation:

1. Centre de Développement des Technologies Avancées, Cité 20 aout; Baba Hassen Alger, 1956 Algeria

2. ICTEAM-UCL, Place du Levant, 3, Maxwell Building; B-1348 Louvain-la-Neuve Belgium

3. EECS, University of Ottawa, 800 King Edward; Ottawa Ontario K1N 6N5 Canada

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

Reference21 articles.

1. http://www.marketsandmarkets.com/Market-Reports/internet-of-things-market-573.html

3. What are the limiting parameters of deep-submicron MOSFETs for high frequency applications;Dambrine;IEEE Electron Device Lett.,2003

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